Manufacturer Part #
IRFP064NPBF
Single N-Channel 55 V 8 mOhm 32 nC HEXFET® Power Mosfet - TO-247-3AC
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:25 per Tube Mounting Method:Through Hole | ||||||||||
| Date Code: | 2409 | ||||||||||
Infineon IRFP064NPBF - Product Specification
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Infineon IRFP064NPBF - Technical Attributes
| Fet Type: | Dual N-Ch |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 8mΩ |
| Rated Power Dissipation: | 200|W |
| Qg Gate Charge: | 32nC |
| Mounting Method: | Through Hole |
Features & Applications
International Rectifier has set an important precedent in MOSFET technology through the IRFP series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, Vishay offers unique technological solutions. Ideal for AC-DC servers, laptop adapters, and desktop power supplies, Vishay strives to meet ongoing customer demand backed by industry-leading quality.
Available Packaging
Package Qty:
25 per Tube
Mounting Method:
Through Hole