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Manufacturer Part #

IRFH6200TRPBF

Single N-Channel 20 V 0.99 mOhm 155 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFH6200TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.99mΩ
Rated Power Dissipation: 150|W
Qg Gate Charge: 155nC
Package Style:  PQFN 5 x 6 mm
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$2,400.00
USD
Quantity
Unit Price
4,000+
$0.60
Product Variant Information section