Manufacturer Part #
IRFB4227PBF
Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3
Infineon IRFB4227PBF - Product Specification
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Subject Capacity extension for dedicated Gen10.7 products by introduction of additional wafer manufacturing site at SamsungElectronics Co. Ltd., Korea and Infineon Technologies Dresden, GermanyReason Extension of wafer manufacturing sites for additional capacity to ensure continuity of supply and flexible manufacturingDescription Old - Wafer Production Location- Newport Wafer Fab Ltd.(NWF Ltd.), United Kingdom- Vanguard International Semiconductor Corporation, Taiwan- Tower Semiconductor Ltd., Israel- Infineon TechnologiesDresden GmbH, Dresden, GermanyNew - Wafer Production Location- Existing Wafer ProductionLocations see �old�- Samsung Electronics Co, Ltd., Korea- Infineon TechnologiesDresden GmbH, GermanyImpact of changeNO change on electrical, thermal parameters and reliability as proven via product qualification and characterizationNO change in existing datasheet parametersNO change in quality and reliability. Processes are optimized to meet product performance according to already applied Infineon specificationTime scheduleIntended start of delivery 2022-04-01 (or earlier based on customer approval)
Part Status:
Infineon IRFB4227PBF - Technical Attributes
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 24mΩ |
Rated Power Dissipation: | 330W |
Qg Gate Charge: | 70nC |
Gate-Source Voltage-Max [Vgss]: | 30V |
Drain Current: | 65A |
Turn-on Delay Time: | 33ns |
Turn-off Delay Time: | 21ns |
Rise Time: | 20ns |
Fall Time: | 31ns |
Operating Temp Range: | -40°C to +175°C |
Gate Source Threshold: | 5V |
Technology: | Advanced Process Technology |
Input Capacitance: | 4600pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole