Manufacturer Part #
IRFB4110PBF
Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon IRFB4110PBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IRFB4110PBF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 4.5mΩ |
| Rated Power Dissipation: | 370W |
| Qg Gate Charge: | 210nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 180A |
| Turn-on Delay Time: | 25ns |
| Turn-off Delay Time: | 78ns |
| Rise Time: | 67ns |
| Fall Time: | 88ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 9.02mm |
| Length: | 10.67mm |
| Input Capacitance: | 9620pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
1
$0.985
40
$0.955
150
$0.93
400
$0.91
1,500+
$0.86
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole