Manufacturer Part #
IRF8010STRLPBF
Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
Product Specification Section
Infineon IRF8010STRLPBF - Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IRF8010STRLPBF - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 15mΩ |
Rated Power Dissipation: | 260W |
Qg Gate Charge: | 81nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 80A |
Turn-on Delay Time: | 15ns |
Turn-off Delay Time: | 61ns |
Rise Time: | 130ns |
Fall Time: | 120ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Input Capacitance: | 3830pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
10 Weeks
Quantity
Unit Price
800
$0.85
1,600
$0.84
2,400
$0.835
3,200
$0.83
4,000+
$0.815
Product Variant Information section
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount