Manufacturer Part #
IRF7779L2TRPBF
Single N-Channel 150 V 11 mOhm 97 nC HEXFET® Power Mosfet - DirectFET®
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:DIRECTFET Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2326 | ||||||||||
Product Specification Section
Infineon IRF7779L2TRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IRF7779L2TRPBF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 150V |
| Drain-Source On Resistance-Max: | 11mΩ |
| Rated Power Dissipation: | 3.3W |
| Qg Gate Charge: | 97nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 11A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 36ns |
| Rise Time: | 19ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Input Capacitance: | 6660pF |
| Package Style: | DIRECTFET |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
4,000
USA:
4,000
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
4,000+
$2.46
Product Variant Information section
Available Packaging
Package Qty:
4000 per Reel
Package Style:
DIRECTFET
Mounting Method:
Surface Mount