
Manufacturer Part #
IRF7342TRPBF
Dual P-Channel 55 V 0.17 Ohm 38 nC HEXFET® Power Mosfet - SOIC-8
Product Specification Section
Infineon IRF7342TRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
ADVISORY
11/14/2022 Details and Download
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Active
Active
Infineon IRF7342TRPBF - Technical Attributes
Attributes Table
Fet Type: | Dual P-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | -55V |
Drain-Source On Resistance-Max: | 0.17Ω |
Rated Power Dissipation: | 2W |
Qg Gate Charge: | 38nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | -3.4A |
Turn-on Delay Time: | 22ns |
Turn-off Delay Time: | 64ns |
Rise Time: | 15ns |
Fall Time: | 32ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | -1V |
Technology: | Generation V |
Height - Max: | 1.75mm |
Length: | 5mm |
Input Capacitance: | 690pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
4,000
USA:
4,000
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Unit Price
4,000
$0.405
8,000+
$0.395
Product Variant Information section
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount