Manufacturer Part #
IRF7341TRPBF
Dual N-Channel 55V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2429 | ||||||||||
Infineon IRF7341TRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#) Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Please see MFR PCN for part number changes
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Infineon IRF7341TRPBF - Technical Attributes
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 50mΩ |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 24nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 4.7A |
| Turn-on Delay Time: | 8.3ns |
| Turn-off Delay Time: | 32ns |
| Rise Time: | 3.2ns |
| Fall Time: | 13ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V |
| Technology: | Generation V |
| Input Capacitance: | 740pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Features & Applications
The IRF7341TRPBF is a Fifth Generation HEXFET from International Rectifier that utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. For more information, please see the datasheet above.
The IRF7341TRPBF comes in a SO-08 package. It comes Tape and Reel as indicated by the TR, and is lead free as indicated by PBF.Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount