Manufacturer Part #
IRF644PBF
Single N-Channel 250 V 0.28 Ohms Flange Mount Power Mosfet - TO-220AB
Vishay IRF644PBF - Product Specification
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Vishay IRF644PBF - Technical Attributes
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 250V |
Drain-Source On Resistance-Max: | 0.28Ω |
Rated Power Dissipation: | 125|W |
Qg Gate Charge: | 68nC |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Flange Mount |
Features & Applications
Vishay has set an important precedent in MOSFET technology through the IRF644 series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, Vishay offers unique technological solutions. Ideal for AC-DC servers, laptop adapters, and desktop power supplies, Vishay strives to meet ongoing customer demand backed by industry-leading quality.
Perfect for both commercial and industrial applications, the IRF644 (this part is lead free) has the capacity to operate at 250V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = 0.28 Ohms). Repetitively avalanche rated, the IRF644 is able to reduce power dissipation levels to approximately 50 watts. The IRF644 provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-220 package format.
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount