Manufacturer Part #
IRF4905PBF
Single P-Channel 55 V 0.02 Ohm 180 nC HEXFET® Power Mosfet - TO-220-3
Product Specification Section
Infineon IRF4905PBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IRF4905PBF - Technical Attributes
Attributes Table
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 0.02Ω |
Rated Power Dissipation: | 200W |
Qg Gate Charge: | 180nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 74A |
Turn-on Delay Time: | 18ns |
Turn-off Delay Time: | 61ns |
Rise Time: | 99ns |
Fall Time: | 96ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 8.77mm |
Length: | 10.54mm |
Input Capacitance: | 3400pF |
Package Style: | TO-220-3 (TO-220AB) |
Pricing Section
Global Stock:
84
USA:
84
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
1
$0.79
40
$0.77
150
$0.75
500
$0.73
2,000+
$0.69
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)