Manufacturer Part #
IPW60R018CFD7XKSA1
IPW60R018 Series N-Channel 600 V 101A 416W Through Hole MOSFET TO-247-3
Product Specification Section
Infineon IPW60R018CFD7XKSA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Fabrication Site Change
08/26/2022 Details and Download
Introduction of an additional wafer production location at Infineon Technologies Austria AG, Villach, Austria for CoolMOS TM CFD7 600V product in PG-TO247-3 package.Reason: Additional capacity to ensure continuity of supply and enable flexible manufacturing.Time schedule: Intended start of delivery 2023-03-31
Part Status:
Active
Active
Infineon IPW60R018CFD7XKSA1 - Technical Attributes
Attributes Table
Product Status: | Active |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 600V |
Drain-Source On Resistance-Max: | 18mΩ |
Rated Power Dissipation: | 416W |
Qg Gate Charge: | 251nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 101A |
Turn-on Delay Time: | 80ns |
Turn-off Delay Time: | 220ns |
Rise Time: | 35ns |
Fall Time: | 8ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | CoolMOS |
Input Capacitance: | 9901pF |
Series: | CoolMOS CFD7 |
Package Style: | TO-247-3 |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
210
USA:
210
On Order:
0
Factory Lead Time:
20 Weeks
Quantity
Unit Price
30+
$10.77
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole