Manufacturer Part #
IPP055N08NF2SAKMA1
Single N-Channel 80 V 5.5 mOhm 36 nC StrongIRFET™ 2 Power MOSFET - TO-220-3
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | 2129 | ||||||||||
Infineon IPP055N08NF2SAKMA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Part Status:
Infineon IPP055N08NF2SAKMA1 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 5.5mΩ |
| Rated Power Dissipation: | 3.8W |
| Qg Gate Charge: | 36nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 99A |
| Turn-on Delay Time: | 14.3ns |
| Turn-off Delay Time: | 21.4ns |
| Rise Time: | 36.8ns |
| Fall Time: | 7.2ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Input Capacitance: | 2500pF |
| Series: | StrongIRFET™ 2 |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Features & Applications
Infineon's StrongIRFET™ 2 power MOSFET 80V features low RDS(on) of 5.5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP055N08NF2S achieves 40 percent lower RDS(on) and 40 percent Qg improvement.
Summary of Features
•Broad availability from distribution partners
•Excellent price/performance ratio
•Ideal for high- and low-switching frequency
•Industry standard footprint through-hole package
•High current rating
•Capable of wave-soldering
Benefits
•Multi-vendor compatibility
•Right-fit products
•Supports a wide variety of applications
•Standard pinout allows for drop-in replacement
•Increased current carrying capability
•Ease of manufacturing
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole