Manufacturer Part #
IPD95R750P7ATMA1
N-Channel 950 V 750 mOhm 23 nC SMT CoolMOS™ Power Mosfet - PG-TO-252-3
Product Specification Section
Infineon IPD95R750P7ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Assembly Site/Material Change
03/07/2022 Details and Download
Part Status:
Active
Active
Infineon IPD95R750P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 950V |
Drain-Source On Resistance-Max: | 0.75Ω |
Rated Power Dissipation: | 73W |
Qg Gate Charge: | 23nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 9A |
Turn-on Delay Time: | 8ns |
Turn-off Delay Time: | 46ns |
Rise Time: | 7ns |
Fall Time: | 8ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | CoolMOS |
Input Capacitance: | 712pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
1,035,000
USA:
1,035,000
Factory Lead Time:
17 Weeks
Quantity
Web Price
2,500
$0.75
5,000+
$0.72
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount