
Manufacturer Part #
IPB048N15N5ATMA1
Single N-Channel 150 V 4.8 mOhm 80 nC OptiMOS™ Power Mosfet - D2PAK
Infineon IPB048N15N5ATMA1 - Product Specification
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Subject Introduction of 300mm wafer diameter at Infineon Technologies Dresden GmbHReason Next phase of Front End capacity expansion by introduction of 300mm wafer diameter to support continuous increasing customer demandDescription Old Wafer Production Site & Wafer Testnfineon Technologies Austria AG, Villach, Austria (200mm)Wafer lot number - VExxxxxx (Villach, 200mm)NewInfineon Technologies Austria AG, Villach, Austria (200mm)andInfineon Technologies Dresden GmbH, Germany (300mm)Wafer lot number - VExxxxxx (Villach,200mm) and ZFxxxxxx (Dresden,300mm)Impact of changeNO change on electrical, thermal parameters and reliability as proven via product qualification and characterization.NO change in existing datasheet parametersNO change in quality and reliability. Processes are optimized to meet product performance according to already applied Infineon specificationTime scheduleFinal qualification report availableFirst samples available on requestIntended start of delivery 2022-05-01
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Infineon IPB048N15N5ATMA1 - Technical Attributes
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 150V |
Drain-Source On Resistance-Max: | 4.8mΩ |
Rated Power Dissipation: | 300|W |
Qg Gate Charge: | 80nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 120A |
Turn-on Delay Time: | 19.6ns |
Turn-off Delay Time: | 4.5ns |
Rise Time: | 5.3ns |
Fall Time: | 37ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 3.8V |
Technology: | OptiMOS |
Height - Max: | 4.57mm |
Length: | 10.31mm |
Input Capacitance: | 6000pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount