IPB048N15N5ATMA1 in Reel by Infineon | Mosfets | Future Electronics
text.skipToContent text.skipToNavigation

Manufacturer Part #

IPB048N15N5ATMA1

Single N-Channel 150 V 4.8 mOhm 80 nC OptiMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2404
Product Specification Section
Infineon IPB048N15N5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 4.8mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 80nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 120A
Turn-on Delay Time: 19.6ns
Turn-off Delay Time: 4.5ns
Rise Time: 5.3ns
Fall Time: 37ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.8V
Technology: OptiMOS
Height - Max: 4.57mm
Length: 10.31mm
Input Capacitance: 6000pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,360.00
USD
Quantity
Unit Price
1,000+
$2.36
Product Variant Information section