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Manufacturer Part #

IPB017N10N5ATMA1

Single N-Channel 100 V 1.7 mOhm 168 nC OptiMOS™ Power Mosfet - D2PAK-7

Product Specification Section
Infineon IPB017N10N5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 1.7mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 168nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 33ns
Turn-off Delay Time: 80ns
Rise Time: 23ns
Fall Time: 27ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 12000pF
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,840.00
USD
Quantity
Web Price
1,000+
$2.84