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Manufacturer Part #

IMT65R030M1HXUMA1

CoolSiC Series 650 V 71 A 42 mOhm Single N-Channel MOSFET - PG-HSOF-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IMT65R030M1HXUMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.03Ω
Rated Power Dissipation: 294W
Qg Gate Charge: 49nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 71A
Turn-on Delay Time: 7.4ns
Turn-off Delay Time: 19.4ns
Rise Time: 12.1ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5.7V
Input Capacitance: 1643pF
Package Style:  HSOF-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$14,560.00
USD
Quantity
Unit Price
2,000+
$7.28