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Manufacturer Part #

IGLD60R070D1AUMA1

IGLD60R070D1: 600 V 15A CoolGaN™ Enhancement-Mode Power Transistor - PG-LSON-8-1

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IGLD60R070D1AUMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 70mΩ
Rated Power Dissipation: 114W
Qg Gate Charge: 5.8nC
Gate-Source Voltage-Max [Vgss]: 10V
Drain Current: 15A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 15ns
Rise Time: 9ns
Fall Time: 13ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.9V
Technology: GaN
Input Capacitance: 380pF
Package Style:  PG-LSON-8-1
Mounting Method: Surface Mount
Features & Applications

Infineon Technologies has extended its CoolGaN™ series of ultra-high efficiency Gallium Nitride (GaN) power transistors with the introduction of two new devices

APPLICATIONS
• Low-power switch-mode power supplies
• Telecoms rectifiers
• Servers
• Adapters and chargers
• Wireless charging
• Hi-fi and audio equipment

FEATURES
• Thermally-efficient surface-mount packages
• Low capacitance
• High quality and reliability
• Devices can be paralleled

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
3000
Total
$24.22
USD
Quantity
Unit Price
1
$24.22
15
$23.82
75
$23.59
300
$23.39
1,500+
$23.06
Product Variant Information section