HUF75652G3 in Tube by onsemi | Mosfets | Future Electronics
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onsemi | HUF75652G3

Manufacturer Part #

HUF75652G3

N-Channel 100 V 0.008 Ω Flange Mount UltraFET Power Mosfet - TO-247

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2425
Product Specification Section
onsemi HUF75652G3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.008Ω
Rated Power Dissipation: 515|W
Qg Gate Charge: 393nC
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications
The HUF75652G3 is a N-Channel 100 V 0.008 Ohm UltraFET Power Mosfet.

Features:

  • Ultra Low On-Resistance
  • rDS(ON) = 0.008Ω, VGS = 10 V
  • Simulation Models
  • Temperature Compensated PSPICE® and SABERTMElectrical Models
  • Spice and SABER Thermal Impedance Models
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve 

Applications:

  • TBA
Read More...
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
6 Weeks
Minimum Order:
450
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,623.50
USD
Quantity
Unit Price
30
$5.93
90
$5.88
150
$5.86
300
$5.83
600+
$5.78
Product Variant Information section