Manufacturer Part #
FQT7N10LTF
N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:SOT-223 (TO-261-4, SC-73) Mounting Method:Surface Mount | ||||||||||
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Product Specification Section
onsemi FQT7N10LTF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi FQT7N10LTF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.35Ω |
| Rated Power Dissipation: | 2|W |
| Qg Gate Charge: | 4.6nC |
| Package Style: | SOT-223 (TO-261-4, SC-73) |
| Mounting Method: | Surface Mount |
Features & Applications
The FQT7N10LTF is a N-Channel enhancement mode power field effect transistor.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
Features:
- 1.7 A, 100 V
- RDS(on) = 0.35 Ω @VGS = 10 V
- Low gate charge (typical 4.6 nC)
- Low Crss (typical 12 pF)
- Fast switching
- Improved dv/dt capability
- Low level gate drive requirments allowingdirect operationfrom logic drives
Applications:
- TBA
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Lead Time:
21 Weeks
Quantity
Unit Price
4,000
$0.22
12,000+
$0.215
Product Variant Information section
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOT-223 (TO-261-4, SC-73)
Mounting Method:
Surface Mount