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onsemi | FDV303N

Manufacturer Part #

FDV303N

N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3

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Mfr. Name: onsemi
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Product Specification Section
onsemi FDV303N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 0.45Ω
Rated Power Dissipation: 0.35|W
Qg Gate Charge: 2.3nC
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The FDV303N is a 25 V 0.45 Ω N-Channel enhancement mode field effect transistors are produced using high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions

Features:

  • 25 V, 0.68 A continuous, 2 A Peak.
  • RDS(ON) = 0.45 Ω @ VGS = 4.5 V
  • RDS(ON) = 0.6 Ω @ VGS= 2.7 V.
  • Low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) 1.5 V.
  • Gate-Source Zener for ESD ruggedness. 6 kV Human Body Model.
  • Compact industry standard SOT-23 surface mount package.
  • Alternative to TN0200T and TN0201T

Applications:

  • Battery circuits
  • Inverter
  • compact portable electronic devices

View the complete family of N-channel mosfets

Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
1,680,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
30000
Multiple Of:
3000
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Total
$1,248.00
USD
Quantity
Web Price
3,000
$0.0452
9,000
$0.0434
12,000
$0.043
30,000
$0.0416
45,000+
$0.0402
Product Variant Information section