Manufacturer Part #
FDS4435BZ
P-Channel 30 V 20 mΩ Surface Mount PowerTrench Mosfet - SOIC-8
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:SOIC-8 | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi FDS4435BZ - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi FDS4435BZ - Technical Attributes
Attributes Table
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 20mΩ |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 28nC |
| Package Style: | SOIC-8 |
Features & Applications
The FDS4435BZ is a 20 mOhm and 30 V P-channel powertrench MOSFET. It is available in surface mount SOIC-8 package.
This P-Channel MOSFET is produced using semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features:
- Max rDS(on) = 20mΩ at VGS = –10V, ID = –8.8A
- Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –6.7A
- Extended VGSS range (–25V) for battery applications
- HBM ESD protection level of ±3.8KV typical
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- Termination is Lead–free and RoHS compliant
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
13 Weeks
Quantity
Unit Price
2,500
$0.22
5,000
$0.215
12,500+
$0.21
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
SOIC-8