Manufacturer Part #
FDN335N
N-Channel 20 V 0.07 Ohm 2.5 V Specified PowerTrench Mosfet SSOT-3
Product Specification Section
onsemi FDN335N - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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onsemi FDN335N - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 70mΩ |
Rated Power Dissipation: | 0.5|W |
Package Style: | SSOT-3 |
Mounting Method: | Surface Mount |
Features & Applications
The FDN335N is a 20 V 0.07 Ohm N-Channel 2.5 V Specified PowerTrench MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features:
- 1.7 A, 20 V. RDS(on) = 0.07 Ω @ VGS = 4.5 V. RDS(on) = 0.100 Ω @ VGS = 2.5 V.
- Low gate charge (3.5nC typical).
- High performance trench technology for extremely lowRDS(ON).
- High power and current handling capability.
Applications:
- Load switch
- Battery protection
- Power management
Pricing Section
Global Stock:
297,000
USA:
84,000
Germany (Online Only):
213,000
Factory Lead Time:
11 Weeks
Quantity
Unit Price
3,000
$0.109
6,000
$0.107
15,000
$0.106
30,000+
$0.104
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SSOT-3
Mounting Method:
Surface Mount