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onsemi | FDB3632

Manufacturer Part #

FDB3632

N-Channel 100 V 9 mOhm Surface Mount PowerTrench Mosfet TO-263AB

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDB3632 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 9mΩ
Rated Power Dissipation: 310|W
Qg Gate Charge: 84nC
Package Style:  TO-263AB
Mounting Method: Surface Mount
Features & Applications

The FDB3632 is a FDB3632 Series 100 V 9 mΩ N-Channel Power Trench Mosfet TO-263AB Package .

Product Fatures :

  • rDS(ON) = 7.5m? (Typ.), VGS = 10V, ID = 80A
  • Qg(tot) = 84nC (Typ.), VGS = 10V
  • Low Miller Charge
  • Low QRR Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • Qualified to AEC Q101
  • RoHS Compliant

Applications :

  • DC/DC converters and Off-Line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24V and 48V Systems
  • High Voltage Synchronous Rectifier
  • Direct Injection / Diesel Injection Systems
  • 42V Automotive Load Control
  • Electronic Valve Train Systems
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,504.00
USD
Quantity
Unit Price
1
$2.45
10
$2.23
40
$2.10
125
$1.99
400+
$1.88
Product Variant Information section