Manufacturer Part #
DMG6602SVTQ-7
Dual N/P-Channel 30 V 1.27 W 13/9 nC Silicon Surface Mount Mosfet - TSOT-26
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| Mfr. Name: | Diodes Incorporated | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Diodes Incorporated DMG6602SVTQ-7 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Diodes Incorporated DMG6602SVTQ-7 - Technical Attributes
Attributes Table
| Fet Type: | Dual N/P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 100mΩ/140mΩ |
| Rated Power Dissipation: | 1.27W |
| Qg Gate Charge: | 13nC/9nC |
| Gate-Source Voltage-Max [Vgss]: | -20V/20V |
| Drain Current: | 2.8A/3.4A |
| Turn-on Delay Time: | 3ns/4.8ns |
| Turn-off Delay Time: | 13ns/20ns |
| Rise Time: | 5ns/7.3ns |
| Fall Time: | 3ns/13ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.3V |
| Technology: | Si |
| Height - Max: | 0.9mm |
| Length: | 2.9mm |
| Input Capacitance: | 290pF/350pF |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Unit Price
3,000
$0.068
9,000
$0.0663
12,000
$0.0659
30,000
$0.0645
45,000+
$0.0631
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel