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Manufacturer Part #

DMG6602SVT-7

N & P Channel 30 V 60 mOhm Complementary Pair Enhancement Mode Mosfet-TSOT-23-6

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Date Code: 2324
Product Specification Section
Diodes Incorporated DMG6602SVT-7 - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
Drain-to-Source Voltage [Vdss]: 30V/-30V
Drain-Source On Resistance-Max: 60mΩ/95mΩ
Rated Power Dissipation: 1.27|W
Qg Gate Charge: 4nC/4nC
Package Style:  TSOT-26
Mounting Method: Surface Mount
Pricing Section
Global Stock:
18,944
Germany (Online Only):
18,944
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$0.29
USD
Quantity
Web Price
1+
$0.29