Manufacturer Part #
DMG6602SVT-7
N & P Channel 30 V 60 mOhm Complementary Pair Enhancement Mode Mosfet-TSOT-23-6
Product Specification Section
Diodes Incorporated DMG6602SVT-7 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Diodes Incorporated DMG6602SVT-7 - Technical Attributes
Attributes Table
Fet Type: | Dual N/P-Ch |
Drain-to-Source Voltage [Vdss]: | 30V/-30V |
Drain-Source On Resistance-Max: | 60mΩ/95mΩ |
Rated Power Dissipation: | 1.27|W |
Qg Gate Charge: | 4nC/4nC |
Package Style: | TSOT-26 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
18,944
Germany (Online Only):
18,944
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Web Price
1+
$0.29
Product Variant Information section
Available Packaging
Package Qty:
2 per
Package Style:
TSOT-26
Mounting Method:
Surface Mount