Manufacturer Part #
DMG6601LVT-7
N & P-Channel 30 V 110 mOhm Complementary Pair Enhancement Mode Mosfet
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| Mfr. Name: | Diodes Incorporated | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Package Style:TSOT-26 Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Diodes Incorporated DMG6601LVT-7 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Diodes Incorporated DMG6601LVT-7 - Technical Attributes
Attributes Table
| Fet Type: | Dual N/P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 55mΩ/110mΩ |
| Rated Power Dissipation: | 0.85W |
| Qg Gate Charge: | 12.3nC/13.8nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 3.8A/2.5A |
| Turn-on Delay Time: | 1.6ns/1.7ns |
| Turn-off Delay Time: | 31.2ns/18.3ns |
| Rise Time: | 7.4ns/4.6ns |
| Fall Time: | 15.6ns/2.2ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V/0.8V |
| Input Capacitance: | 422pF/541pF |
| Package Style: | TSOT-26 |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Unit Price
3,000
$0.0573
9,000
$0.0559
15,000
$0.0552
30,000
$0.0544
60,000+
$0.053
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
TSOT-26
Mounting Method:
Surface Mount