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Manufacturer Part #

BSZ160N10NS3GATMA1

Single N-Channel 100 V 16 mOhm 19 nC OptiMOS™ Power Mosfet - TSDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon BSZ160N10NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 16mΩ
Rated Power Dissipation: 2.1|W
Qg Gate Charge: 19nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,275.00
USD
Quantity
Unit Price
5,000+
$0.455