BSS123-7-F in Reel by Diodes Incorporated | Mosfets | Future Electronics
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Diodes Incorporated | BSS123-7-F

Manufacturer Part #

BSS123-7-F

N-Channel 100 V 6 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2409
Product Specification Section
Diodes Incorporated BSS123-7-F - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 6Ω
Rated Power Dissipation: 300|mW
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications
The BSS123-7-F is a part of BSS123 Series 100 V 6 O N-Channel Enhancement Mode Transistor available in a SOT-23-3 package.

Product Features:

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • High Drain-Source Voltage Rating
  • Power Dissipation is 300 mW
  • Thermal Resistance, Junction to Ambient is 417 °C/W
  • Operating and Storage Temperature Range is -55 to +150 °C

Applications:

  • Small servo motor control
  • Power MOSFET gate drivers
  • Switching applications

View the BSS123 Series of Transistor

Read More...
Pricing Section
Global Stock:
510,000
USA:
510,000
On Order:Order inventroy details
1,308,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$41.10
USD
Quantity
Unit Price
3,000
$0.0137
9,000
$0.0133
15,000
$0.0132
60,000
$0.0128
90,000+
$0.0125
Product Variant Information section