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Manufacturer Part #

BSC670N25NSFDATMA1

BSC670N25NSFD Series 250 V 67 mOhm OptiMOSTM3 Power-Transistor PG-TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC670N25NSFDATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 250V
Drain-Source On Resistance-Max: 67mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 24A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 19ns
Rise Time: 3.6ns
Fall Time: 4ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 1810pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
5000
Multiple Of:
5000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$6,700.00
USD
Quantity
Unit Price
5,000+
$1.34
Product Variant Information section