Manufacturer Part #
BSC093N15NS5ATMA1
Single N-Channel 150 V 9.3 mOhm 33 nC OptiMOS™ Power Mosfet - TDSON-8
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:5000 per Reel Package Style:TDSON-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon BSC093N15NS5ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
PCN UPDATE
06/28/2022 Details and Download
Updated information marked in BLUE TYPE Original PCN N� 2022-001-A dated 2022-05-30 Detailed change information Subject : Capacity extension and harmonization of mould compound at Tongfu Microelectronics Co. Ltd. for PG-TDSON-8 package Reason: Expansion of assembly and test production to cover increasing customer demand, and enable flexible manufacturing
Assembly Site Change
06/06/2022 Details and Download
Part Status:
Active
Active
Infineon BSC093N15NS5ATMA1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 150V |
| Drain-Source On Resistance-Max: | 9.3mΩ |
| Rated Power Dissipation: | 139W |
| Qg Gate Charge: | 33nC |
| Gate-Source Voltage-Max [Vgss]: | 10V |
| Drain Current: | 87A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 14.4ns |
| Rise Time: | 4.3ns |
| Fall Time: | 3.8ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Technology: | Si |
| Input Capacitance: | 3230pF |
| Package Style: | TDSON-8 |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
26 Weeks
Quantity
Unit Price
5,000+
$1.24
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Package Style:
TDSON-8
Mounting Method:
Surface Mount