IKW50N65ES5XKSA1 in Tube by Infineon | IGBTs | Future Electronics
text.skipToContent text.skipToNavigation

Manufacturer Part #

IKW50N65ES5XKSA1

IKW50N65ES5 Series 650 V 80 A Through Hole IGBT TrenchStop™ - PG-TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IKW50N65ES5XKSA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 274W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 200A
Collector - Emitter Saturation Voltage: 1.35V
Turn-on Delay Time: 20ns
Turn-off Delay Time: 127ns
Qg Gate Charge: 120nC
Reverse Recovery Time-Max: 70ns
Leakage Current: 100nA
Input Capacitance: 3100pF
Operating Temp Range: -40°C to +175°C
No of Terminals: 3
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
240
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$74.40
USD
Quantity
Unit Price
30
$2.48
90
$2.45
300
$2.41
600
$2.39
1,200+
$2.35
Product Variant Information section