Manufacturer Part #
GAN7R0-150LBEZ
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Gri
Product Specification Section
Nexperia GAN7R0-150LBEZ - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Nexperia GAN7R0-150LBEZ - Technical Attributes
Attributes Table
Product Status: | Active |
Technology: | GaNFET (Gallium Nitride) |
Fet Type: | N-Ch |
Drain Current: | 60A |
No of Channels: | 1 |
Qg Gate Charge: | 12nC |
Drain-to-Source Voltage [Vdss]: | 100V |
Gate-Source Voltage-Max [Vgss]: | 6V |
Input Capacitance: | 1000pF |
Rated Power Dissipation: | 394W |
Operating Temp Range: | -40°C to +150°C |
Package Style: | WLCSP-8 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Lead Time:
6 Weeks
Quantity
Unit Price
1
$1.26
40
$1.24
125
$1.23
400
$1.21
1,250+
$1.18
Product Variant Information section
Available Packaging
Package Qty:
2 per
Package Style:
WLCSP-8
Mounting Method:
Surface Mount