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Manufacturer Part #

GAN7R0-150LBEZ

150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Gri

Product Specification Section
Nexperia GAN7R0-150LBEZ - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 60A
No of Channels: 1
Qg Gate Charge: 12nC
Drain-to-Source Voltage [Vdss]: 100V
Gate-Source Voltage-Max [Vgss]: 6V
Input Capacitance: 1000pF
Rated Power Dissipation: 394W
Operating Temp Range: -40°C to +150°C
Package Style:  WLCSP-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
6 Weeks
Minimum Order:
1
Multiple Of:
2
Total
$1.26
USD
Quantity
Unit Price
1
$1.26
40
$1.24
125
$1.23
400
$1.21
1,250+
$1.18