Manufacturer Part #
GAN3R2-100CBEAZ
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip
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| Mfr. Name: | Nexperia | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1500 per Reel Package Style:WLCSP-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2309 | ||||||||||
Product Specification Section
Nexperia GAN3R2-100CBEAZ - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Nexperia GAN3R2-100CBEAZ - Technical Attributes
Attributes Table
| Product Status: | Active |
| Technology: | GaNFET (Gallium Nitride) |
| Fet Type: | N-Ch |
| Drain Current: | 60A |
| No of Channels: | 1 |
| Qg Gate Charge: | 12nC |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Gate-Source Voltage-Max [Vgss]: | 6V |
| Input Capacitance: | 1000pF |
| Rated Power Dissipation: | 349W |
| Operating Temp Range: | -40°C to +150°C |
| Package Style: | WLCSP-8 |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Lead Time:
6 Weeks
Quantity
Unit Price
1,500+
$1.55
Product Variant Information section
Available Packaging
Package Qty:
1500 per Reel
Package Style:
WLCSP-8
Mounting Method:
Surface Mount