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Nexperia | GAN190-650EBEZ

Manufacturer Part #

GAN190-650EBEZ

650 V, 11.5 A, 190 mOhm, SOT8074-1

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Nexperia GAN190-650EBEZ - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 11.5A
No of Channels: 1
Qg Gate Charge: 2.8nC
Drain-to-Source Voltage [Vdss]: 650V
Gate-Source Voltage-Max [Vgss]: 7V
Input Capacitance: 96pF
Rated Power Dissipation: 125W
Operating Temp Range: -55°C to +150°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
6 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,125.00
USD
Quantity
Unit Price
2,500+
$1.25
Product Variant Information section