Manufacturer Part #
MUN5211DW1T1G
MUN5211DW1 Series 2 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-363
Product Specification Section
onsemi MUN5211DW1T1G - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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onsemi MUN5211DW1T1G - Technical Attributes
Attributes Table
Polarity: | NPN-Pre-Biased |
R1, R2: | 10kΩ/10kΩ |
Collector Current Max: | 100mA |
Output Current-Max: | 100mA |
CE Voltage-Max: | 50V |
Supply Voltage: | 2V |
Power Dissipation-Tot: | 385mW |
Collector - Base Voltage: | 50V |
Collector - Emitter Saturation Voltage: | 0.25V |
DC Current Gain-Min: | 35 |
Configuration: | Dual |
Collector - Current Cutoff: | 100nA |
Operating Temp Range: | -55°C to +150°C |
Package Style: | SOT-363 (SC-70-6, SC-88) |
Mounting Method: | Surface Mount |
Features & Applications
The MUN5211DW1T1G is a Low power NPN Silicon Surface Mount Transistors with Dual Monolithic Bias Resistor Network; designed to replace a single device and it's external resistor bias network.
It's monolithic bias network consisting of two resistors which eliminates these individual components by integrating them in to a single device.
Features:
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- AEC−Q101 Qualified and PPAP Capable
- Pb−Free Packages are Available
Applications:
- Supply line switches
- Battery charger switches
- High-side switches for LEDs, drivers and backlights
- Portable equipment
Pricing Section
Global Stock:
537,000
USA:
537,000
On Order:
0
Factory Lead Time:
10 Weeks
Quantity
Web Price
3,000
$0.0317
9,000
$0.0305
15,000
$0.03
45,000
$0.0289
75,000+
$0.0279
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SOT-363 (SC-70-6, SC-88)
Mounting Method:
Surface Mount