onsemi | NCP51705MNTXG

The NCP51705 is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn-off, the NCP51705 can utilize its on-board charge pump to generate a user selectable negative voltage rail. For isolated applications, the NCP51705 also provides an externally accessible 5V rail to power the secondary side of digital or high speed opto isolators.

FEATURES

• 6A peak output current
• User adjustable built-in negative charge pump
• Adjustable under-voltage lockout
• Thermal shutdown function
• Extended positive voltage rating
• Accessible 5V reference/bias rail for digital oscillator supply
• Desaturation function
• Low parasitic inductance QFN-24 package