IRF8010STRLPBF in Reel by Infineon | Mosfets | Future Electronics
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Infineon | IRF8010STRLPBF

Manufacturer Part #

IRF8010STRLPBF

Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2349
Product Specification Section
Infineon IRF8010STRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 15mΩ
Rated Power Dissipation: 260W
Qg Gate Charge: 81nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 61ns
Rise Time: 130ns
Fall Time: 120ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Input Capacitance: 3830pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
18,400
USA:
18,400
On Order:Order inventroy details
35,200
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$700.00
USD
Quantity
Unit Price
800
$0.875
1,600
$0.865
2,400
$0.855
3,200
$0.85
4,000+
$0.835
Product Variant Information section