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onsemi | FDD306P

Manufacturer Part #

FDD306P

Single P-Channel 12 V 52 W 21 nC Silicon Surface Mount Mosfet - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDD306P - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 12V
Drain-Source On Resistance-Max: 90mΩ
Rated Power Dissipation: 52W
Qg Gate Charge: 21nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 6.7A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 34ns
Rise Time: 16ns
Fall Time: 65ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.5V
Technology: Si
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 1290pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,000.00
USD
Quantity
Unit Price
2,500
$0.40
5,000
$0.395
7,500
$0.39
12,500+
$0.385
Product Variant Information section