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Manufacturer Part #
IRF840PBF-BE3
500V,8A,850MOHM,TO-220 - COO: TAIWAN
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:1000 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole |
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Vishay IRF840PBF-BE3 - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces the capacity transfer to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel. Products manufactured at Newport will be identified by a ?R? in the fourth position of the date code marked on the 2nd line of the partReason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel
Part Status:
-
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Vishay IRF840PBF-BE3 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 0.85Ω |
| Rated Power Dissipation: | 125W |
| Qg Gate Charge: | 63nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 8A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 49ns |
| Rise Time: | 23ns |
| Fall Time: | 20ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 1300pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole