Diodes Incorporated DMWS120H100SM4 N-Channel MOSFET
First SiC 1200V N-Channel Silicon Carbide Power MOSFET in TO247-4 Package Enables Higher Power Density
Diodes Incorporated’s DMWS120H100SM4 is a 1200V, industrial-compliant, N-channel MOSFET— and is the first product to be released with a silicon carbide (SiC) chip material in the TO247-4 package.
It enables high density and efficiency in industrial motor drivers, photovoltaic energy systems, DC-DC converters, and power supplies for data centers and telecoms.
This device’s low RDS(ON), coupled with a low Qg at 15V gate drive of 52nC, enables system designers to maximize efficiency while ensuring power dissipation is kept to a minimum.
The TO247-4 package includes an additional Kelvin-sensing pin in the fourth lead that connects to the source and provides the ability to optimize switching performance.
This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
The DMWS120H100SM4 is AEC-Q101 qualified, manufactured in IATF 16949 certified facilities, and rated to +150°C TJ.
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