Manufacturer Part #
NVH4L025N065SC1
N-Channel 650 V 99 A 348 W Through Hole Silicon Carbide MOSFET - TO-247-4L
Product Specification Section
onsemi NVH4L025N065SC1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi NVH4L025N065SC1 - Technical Attributes
Attributes Table
Technology: | SiCFET (Silicon Carbide) |
Product Status: | Active |
Fet Type: | N-Ch |
No. of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain Current: | 99A |
Input Capacitance: | 3480pF |
Power Dissipation: | 348W |
Operating Temp Range: | -55°C to +175°C |
Package Style: | TO-247-4 |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
16
USA:
16
On Order:
0
Factory Lead Time:
17 Weeks
Quantity
Unit Price
1
$16.82
5
$16.59
20
$16.40
50
$16.27
125+
$16.02
Product Variant Information section
Available Packaging
Package Qty:
1 per Tube
Package Style:
TO-247-4
Mounting Method:
Through Hole