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Infineon | IPT015N10N5ATMA1

Manufacturer Part #

IPT015N10N5ATMA1

Single N-Channel 100 V 1.5 mOhm 211 nC OptiMOS™ Power Mosfet - HSOF-8-1

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPT015N10N5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 1.5mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 169nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 300A
Turn-on Delay Time: 36ns
Turn-off Delay Time: 85ns
Rise Time: 30ns
Fall Time: 30ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 12nF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2000
Multiple Of:
2000
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Total
$6,160.00
USD
Quantity
Unit Price
2,000+
$3.08
Product Variant Information section