Manufacturer Part #
IPT015N10N5ATMA1
Single N-Channel 100 V 1.5 mOhm 211 nC OptiMOS™ Power Mosfet - HSOF-8-1
Product Specification Section
Infineon IPT015N10N5ATMA1 - Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Assembly Site/Material Change
01/13/2023 Details and Download
Part Status:
Active
Active
Infineon IPT015N10N5ATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 1.5mΩ |
Rated Power Dissipation: | 375W |
Qg Gate Charge: | 169nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 300A |
Turn-on Delay Time: | 36ns |
Turn-off Delay Time: | 85ns |
Rise Time: | 30ns |
Fall Time: | 30ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 3V |
Technology: | OptiMOS |
Input Capacitance: | 12nF |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
Germany (Online Only):
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
2,000+
$2.13
Product Variant Information section
Available Packaging
Package Qty:
2000 per Reel
Mounting Method:
Surface Mount