Manufacturer Part #
FQT5P10TF
P-Channel 100 V 1.05 Ohm Surface Mount Mosfet - SOT-223
Product Specification Section
onsemi FQT5P10TF - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
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onsemi FQT5P10TF - Technical Attributes
Attributes Table
Fet Type: | P-Ch |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 1.05Ω |
Rated Power Dissipation: | 2|W |
Qg Gate Charge: | 6.3nC |
Package Style: | SOT-223 (TO-261-4, SC-73) |
Mounting Method: | Surface Mount |
Features & Applications
The FQT5P10TF is a P-Channel enhancement mode power field effect transistor.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features:
- -1.0 A, -100 V
- RDS(on) = 1.05 Ω @VGS = -10 V
- Low gate charge (typical 6.3 nC)
- Low Crss (typical 18 pF)
- Fast switching
- Improved dv/dt capability
Applications:
- TBA
Pricing Section
Global Stock:
160,000
USA:
132,000
Germany (Online Only):
28,000
Factory Lead Time:
32 Weeks
Quantity
Unit Price
4,000
$0.24
8,000
$0.235
16,000+
$0.23
Product Variant Information section
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOT-223 (TO-261-4, SC-73)
Mounting Method:
Surface Mount