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Manufacturer Part #

DMN53D0LDW-7

Dual N-Channel 50 V 310 mW 0.6 nC Silicon Surface Mount Mosfet - SOT-363

Product Specification Section
Diodes Incorporated DMN53D0LDW-7 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 50V
Drain-Source On Resistance-Max: 4.5Ω
Rated Power Dissipation: 310mW
Qg Gate Charge: 0.6nC
Gate-Source Voltage-Max [Vgss]: 1.5V
Drain Current: 360mA
Turn-on Delay Time: 2.7ns
Turn-off Delay Time: 19ns
Rise Time: 2.5ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.5V
Technology: Si
Height - Max: 1mm
Length: 2.2mm
Input Capacitance: 46pF
Pricing Section
Global Stock:
69,000
USA:
9,000
Germany (Online Only):
60,000
102,000
Factory Stock:Factory Stock:
441,000
Factory Lead Time:
8 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$110.40
USD
Quantity
Web Price
3,000
$0.0368
9,000
$0.0355
30,000
$0.0342
60,000
$0.0334
120,000+
$0.032