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Manufacturer Part #

DMG4800LSD-13

DMG4800 Series Dual N-Channel 30 V 8.5 A 16 Mohm Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2323
Product Specification Section
Diodes Incorporated DMG4800LSD-13 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 16mΩ
Rated Power Dissipation: 940|mW
Qg Gate Charge: 9.47nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
125,000
Germany (Online Only):
125,000
325,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$357.50
USD
Quantity
Web Price
2,500
$0.143
5,000
$0.14
10,000
$0.138
12,500
$0.137
37,500+
$0.132
Product Variant Information section