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Manufacturer Part #

BSS123,215

BSS123 Series 100 V 6 O 25 mW N-Channel TrenchMOS Logic Level FET - SOT-23

Product Specification Section
Nexperia BSS123,215 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 0.25|W
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications
The BSS123,215 is a Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Features:

  • ’Trench’ technology
  • Extremely fast switching
  • Logic level compatible
  • Subminiature surface mounting package

Applications:

  • High-speed line drivers
  • Relay drivers
  • Telephone ringers

View the BSS Series of N-Channel TrenchMOS Logic Level FET

Pricing Section
Global Stock:
15,000
USA:
15,000
30,000
Factory Stock:Factory Stock:
-1
Factory Lead Time:
8 Weeks
Minimum Order:
3000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$73.50
USD
Quantity
Unit Price
3,000
$0.0245
9,000
$0.0239
15,000
$0.0236
30,000
$0.0233
60,000+
$0.0227