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Nexperia | BSH103,215

Manufacturer Part #

BSH103,215

BSH103 Series 30 V 850 mA 400 mOhm N-Ch Enhancement Mode MOS Transistor - SOT-23

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2422
Product Specification Section
Nexperia BSH103,215 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.4Ω
Rated Power Dissipation: 500|mW
Qg Gate Charge: 2100pC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 0.85A
Turn-on Delay Time: 2.5ns
Turn-off Delay Time: 20ns
Rise Time: 3.5ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Height - Max: 1mm
Length: 3mm
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications
The BSH Series is a Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
 
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
 
Features:
 
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for use with all 5 V logic families
  • Suitable for very low gate drive sources

Applications:

  • "Glue-logic"; interface between logic blocks and/or periphery
  • Battery powered applications
  • DC-to-DC convertors
  • General purpose switching
  • Power management

 

 

Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:Order inventroy details
45,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$201.00
USD
Quantity
Unit Price
3,000
$0.067
9,000
$0.0653
12,000
$0.0649
30,000
$0.0635
45,000+
$0.0622
Product Variant Information section