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Référence fabricant

MJD31CT4G

MJD31 Series 100 V 3 A 1.56 W Complementary Power Transistor - DPAK-3

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Code de date: 2451
Product Specification Section
onsemi MJD31CT4G - Caractéristiques techniques
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 100V
Collector Current Max: 3A
Power Dissipation-Tot: 1.56W
DC Current Gain-Min: 25
Style d'emballage :  TO-252-3 (DPAK)
Méthode de montage : Tab Mount
Fonctionnalités et applications
The MJD31CT4G is a Complementary Power Transistor with Base Current of 1 A, available in a TO-252 package.

Features:

  • Lead Formed for Surface Mount Applications in Plastic Sleeves
  • Straight Lead Version in Plastic Sleeves (“1” Suffix)
  • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
  • Electrically Similar to Popular TIP31 and TIP32 Series
  • Epoxy Meets UL 94, V-0 @ 0.125 in
  • ESD Ratings:
    • Human Body Model, 3B > 8000 V
    • Machine Model, C > 400 V
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are Pb-Free Packages

Applications:

  • General purpose amplifier
  • Low speed switching applications

View the List of available MJD31 Series of Bipolar Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
26 Semaines
Commande minimale :
5000
Multiples de :
2500
Total 
830,00 $
USD
Quantité
Prix unitaire
2 500
$0.168
5 000
$0.166
7 500
$0.165
10 000
$0.164
12 500+
$0.162