onsemi — FGY100T120RWD and FGY75T120SWD Field-Stop 7 IGBTs

onsemi 1200V Field Stop 7 (FS7) Discrete IGBTs

Using 7th generation IGBT technology

The new FGY100T120RWD and FGY75T120SWD 1200 V Trench Field Stop VII (FS7) IGBTs by onsemi are used to boost input to high voltage (Boost stage) as well as the inverter to provide an AC output in high switching frequency energy infrastructure applications. The low switching losses of FS7 devices enable higher switching frequencies that reduce the size of magnetic components, increasing power density and reducing system cost.

For high-power energy infrastructure applications, the positive temperature coefficient of FS7 devices enables easy parallel operation.

The FS7 devices by onsemi include high-speed (S-series) and medium-speed (R-Series) options. All devices include an optimized diode for low VF, tuned switching softness and can operate with junction temperatures (TJ) up to 175°C. The S-Series devices, like FGY75T120SWD, offer the best switching performance among currently available 1200 V IGBTs in the market. Tested with currents up to 7 times the rated value, this highly rugged IGBT platform also offers best-in-class latch-up immunity. The R-Series is optimized for medium-speed switching applications, such as motor control and solid-state relay in which conduction losses are dominant occurs. FGY100T120RWD shows a VCESAT as low as 1.45 V at 100A, an improvement of 0.4 V over previous generation devices.

The FS7 devices are available in a range of package styles including TO247-3L, TO247-4L, Power TO247-3L and as bare die, giving designers flexibility and design options. Available in current ratings from 25A to 160A.